Quang Tu Thieu

Homoepitaxial growth of β-Ga₂O₃layers by halide vapor phase epitaxy

Hisashi Murakami, Kazushiro Nomura, Ken Goto et al. · Applied Physics Express · 2014 · 384 citations

Oxide Heterostructures, Materials Science, Engineering +13

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on <i>n</i>––Ga2O3 drift layers grown by halide vapor phase epitaxy

Masataka Higashiwaki, Keita Konishi, Kohei Sasaki et al. · Applied Physics Letters · 2016 · 336 citations

First Demonstration of Ga₂O₃Trench MOS-Type Schottky Barrier Diodes

Kohei Sasaki, Daiki Wakimoto, Quang Tu Thieu et al. · IEEE Electron Device Letters · 2017 · 224 citations

Semiconductors, Materials Engineering, Electrical Engineering +8

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi></mml:math>-gallium oxide single crystals

M. Schubert, Rafał Korlacki, Sean Knight et al. · Physical review. B./Physical review. B · 2016 · 206 citations · Full text

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode <i>β</i>-Ga2O3 vertical transistors

Zongyang Hu, Kazuki Nomoto, Wenshen Li et al. · Applied Physics Letters · 2018 · 161 citations

Premature Transistor Breakdown, Electrical Engineering, Transistor Channels +14