ACS Applied Materials & Interfaces · 2022 · 43 citations · 36 references
Natural SciencesMaterials EngineeringMaterials ScienceNanotechnologyPolymer ChemistryPolymer MaterialsElectron Beam LithographyFabrication MaterialsPolymer CharacterizationPolymer Physical ChemistryPolymer Thin FilmsElectron Beam Lithography MasksElectron Beam Resist MaterialsExtreme Ultraviolet LithographyLine Edge Roughness AnalysisLine RoughnessLine-edge RoughnessResist ContrastResist Patterning
with a line edge roughness of 2.8 nm was achieved. Our detailed study of the reaction and patterning mechanism suggests that the decomposition of the polar triflate and triphenyl sulfonium groups into nonpolar sulfide or polystyrene plays an important role in the solubility switch.
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Para-selective borylation of monosubstituted benzenes using a transient mediator
Jie Wu, Zengwei Wang, Xiaoyue Chen et al. · Science China Chemistry · 2019 · 161 citations
Acid distribution in chemically amplified extreme ultraviolet resist
Takahiro Kozawa, Seiichi Tagawa, Heidi B. Cao et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 152 citations
Natural Sciences, Materials Engineering, Materials Science +13