Resist Contrast
Resist Contrast is a lithographic performance metric that quantifies the ability of a photoresist to produce distinct solubility changes in response to varying electron doses during Electron Beam Lithography, distinguishing it from other resist characteristics by specifically characterizing the steepness of the resist’s response curve in the dose–solubility relationship.
202
Publications
6.3K
Citations
703
Authors
154
Institutions
Publications per year
2017–2026
8
202
S. A. Rishton, D. P. Kern · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 152 citations
1–5 of 202
703
6
h-index
6
h-index
5
h-index
4
h-index
4
h-index
1–5 of 703
154
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
10 h-index
30 publications
1.2K citations
Paul Scherrer Institute
Villigen, Switzerland
9 h-index
24 publications
675 citations
NTT (Japan)
Tokyo, Japan
9 h-index
21 publications
838 citations
Massachusetts Institute of Technology
Cambridge, United States
7 h-index
21 publications
1.2K citations
University of Cambridge
Cambridge, United Kingdom
6 h-index
14 publications
391 citations
IBM Research - Almaden
San Jose, United States
6 h-index
21 publications
1.7K citations
AT&T (United States)
Bedminster, United States
5 h-index
39 publications
857 citations
University of California, Berkeley
Berkeley, United States
5 h-index
8 publications
142 citations
1–8 of 154
52 publications · 2.4K citations
27
h-index
44 publications · 975 citations
17
h-index
JJAP · 14 publications · 261 citations
12
h-index
17 publications · 478 citations
12
h-index
9 publications · 199 citations
9
h-index
1–5