Resist Contrast

Resist Contrast is a lithographic performance metric that quantifies the ability of a photoresist to produce distinct solubility changes in response to varying electron doses during Electron Beam Lithography, distinguishing it from other resist characteristics by specifically characterizing the steepness of the resist’s response curve in the dose–solubility relationship.

202

Publications

6.3K

Citations

703

Authors

154

Institutions

Publications per year

2017–2026

8

Publications

202

1–5 of 202

Authors

703

  1. LF
    L. F. Thompson

    AT&T (United States), United States

    6 publications · 212 citations

    6

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  2. YE
    Yasin Ekinci

    Paul Scherrer Institute, Switzerland

    6 publications · 177 citations

    6

    h-index

  3. AR
    Adam R. Pawloski

    Advanced Micro Devices (United States), United States

    5 publications · 138 citations

    5

    h-index

  4. CA
    Chris A. Mack

    KLA (United States), United States

    4 publications · 71 citations

    4

    h-index

  5. MV
    Michaela Vockenhuber

    Paul Scherrer Institute, Switzerland

    4 publications · 146 citations

    4

    h-index

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