GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current

Abstract

There is a strong need for a large band gap pFET device with good performance for an efficient high voltage CMOS platform for power conversion applications. In this work, we report on GaN/ AlGaN superlattice based MES-FinFET devices with MOCVD regrown p+ contacts around the fins. 75 nm wide FinFETs showed a normally-off operation with an on-current of 65 mA/mm, highest ever reported for any GaN based E-mode pFETs. Simultaneously, a large I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> /I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> was also achieved.