Athith Krishna

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

Brian Romanczyk, Xun Zheng, Matthew Guidry et al. · IEEE Electron Device Letters · 2020 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Pawana Shrestha, Matthew Guidry, Brian Romanczyk et al. · IEEE Electron Device Letters · 2020 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current

Aditya Raj, Athith Krishna, Nirupam Hatui et al. · IEEE Electron Device Letters · 2020 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density

Brian Romanczyk, Weiyi Li, Matthew Guidry et al. · IEEE Electron Device Letters · 2020 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

Athith Krishna, Aditya Raj, Nirupam Hatui et al. · physica status solidi (a) · 2019 · 34 citations · Full text

Engineering, Materials Engineering, Materials Science +17