Nirupam Hatui

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

Brian Romanczyk, Xun Zheng, Matthew Guidry et al. · IEEE Electron Device Letters · 2020 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Pawana Shrestha, Matthew Guidry, Brian Romanczyk et al. · IEEE Electron Device Letters · 2020 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

Priti Gupta, A. Azizur Rahman, Nirupam Hatui et al. · Journal of Crystal Growth · 2013 · 79 citations

Engineering, Materials Engineering, Materials Science +13

Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current

Aditya Raj, Athith Krishna, Nirupam Hatui et al. · IEEE Electron Device Letters · 2020 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

Chirag Gupta, Silvia H. Chan, Anchal Agarwal et al. · IEEE Electron Device Letters · 2017 · 54 citations

Engineering, Electrical Engineering, Materials Science +17