Robert Hamwey

Statistics

Publications

Citations

104

H-Index

Active since

2021

Affiliations

University of California, Santa Barbara(Current)

Robert Hamwey is an author at University of California, Santa Barbara specializing in semiconductor devices, wide-bandgap semiconductor devices, and materials science.

ORCID

Publications per year

2021–2024

Publications

First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz

Emre Akso, Henry Collins, Christopher Clymore et al. · IEEE Microwave and Wireless Technology Letters · 2023 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz

Emre Akso, Henry Collins, Kamruzzaman Khan et al. · IEEE Microwave and Wireless Technology Letters · 2024 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P<sub>out</sub> at 94 GHz

Henry Collins, Emre Akso, Christopher J. Clymore et al. · IEEE Microwave and Wireless Technology Letters · 2024 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current

Aditya Raj, Athith Krishna, Nirupam Hatui et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 16 citations

Engineering, Electrical Engineering, Materials Science +14

Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE

Christian Wurm, Henry Collins, Nirupam Hatui et al. · Journal of Applied Physics · 2022 · 13 citations

Engineering, Materials Engineering, Materials Science +17

1–5 of 6