Christian Wurm - Concepedia

Author

Christian Wurm

University of California, Santa Barbara ORCID

Also Known As

C. Wurm, Christian D. Wurm, Christian Wurm, Wurm, Christian D.

Publications

573

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara University of Michigan

About

Christian Wurm is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	454
2	Applied Physics	11	12	454
3	Electrical Engineering	10	11	432
4	Materials Science	2	2	35
5	Materials Engineering	1	1	13

Christian Wurm

Publications

514

Citations

H-Index

Page 1

	Year	Citations
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Brian Romanczyk, Xun Zheng, Matthew Guidry, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringAdditional PassivationEngineeringW-band Power Performance	2020	112
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz Pawana Shrestha, Matthew Guidry, Brian Romanczyk, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGan HemtsEngineeringRf Semiconductor	2020	88
6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates Wenjian Liu, Brian Romanczyk, Matthew Guidry, IEEE Microwave and Wireless Components Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringRecord 33.8Engineering	2021	50
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs Weiyi Li, Brian Romanczyk, Matthew Guidry, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorApplied Physics	2023	46
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density Brian Romanczyk, Weiyi Li, Matthew Guidry, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesPhysics	2020	44
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Shubhra S. Pasayat, Elaheh Ahmadi, Brian Romanczyk, Semiconductor Science and Technology	2019	29
Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN Cory Lund, M. Catalano, Lühua Wang, Journal of Applied Physics Wide-bandgap SemiconductorN-polar Inn LayersEngineeringSemiconductorsVicinal Gan	2018	22
First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz Emre Akso, Henry Collins, Christopher Clymore, IEEE Microwave and Wireless Technology Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	2023	21
Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy Christian Wurm, Elaheh Ahmadi, Feng Wu, Solid State Communications High-quality N-polar GanWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2019	17
Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE Weiyi Li, Brian Romanczyk, Emre Akso, 2022 International Electron Devices Meeting (IEDM) Wide-bandgap SemiconductorGhz PerformanceElectrical EngineeringRecord 94Significant Efficiency Improvement	2022	16

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