Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Yong Cai, Yugang Zhou, Kei May Lau et al. · IEEE Transactions on Electron Devices · 2006 · 524 citations

Engineering, Electrical Engineering, Physics +17

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

Michael J. Uren, Janina Möreke, Martin Kuball · IEEE Transactions on Electron Devices · 2012 · 344 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Testing the Temperature Limits of GaN-Based HEMT Devices

David Maier, M. Alomari, N. Grandjean et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 155 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar et al. · IEEE Electron Device Letters · 2017 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Ning Wang, Hui Wang, Xinpeng Lin et al. · AIP Advances · 2017 · 14 citations · Full text

Engineering, Electrical Engineering, Materials Science +15