Nandha Kumar Subramani

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar et al. · IEEE Journal of the Electron Devices Society · 2017 · 99 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

Nandha Kumar Subramani, Amit Kumar Sahoo, Jean‐Christophe Nallatamby et al. · IEEE Transactions on Microwave Theory and Techniques · 2016 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar et al. · IEEE Electron Device Letters · 2017 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

P. Vigneshwara Raja, Nandha Kumar Subramani, F. Gaillard et al. · Electronics · 2021 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism

A. K. Sahoo, Nandha Kumar Subramani, Jean‐Christophe Nallatamby et al. · Solid-State Electronics · 2015 · 25 citations

Engineering, Electrical Engineering, Materials Science +17