Current Stress Reliability

Current Stress Reliability is a reliability assessment metric that quantifies the durability and performance stability of a semiconductor device under prolonged electrical current flow, distinguishing itself by specifically characterizing degradation mechanisms induced by high current density and electromigration effects.

232

Publications

7.6K

Citations

991

Authors

248

Institutions

Publications per year

2017–2026

Parents

Device Reliability

Publications

232

Reliability and current carrying capacity of carbon nanotubes

Bingqing Wei, Róbert Vajtai, Pulickel M. Ajayan · Applied Physics Letters · 2001 · 1.3K citations

Engineering, Materials Engineering, Materials Science +16

Failure mechanisms of solder interconnects under current stressing in advanced electronic packages

Y.C. Chan, Daoguo Yang · Progress in Materials Science · 2010 · 275 citations

Engineering, Electrical Engineering, Materials Engineering +17

Improving the ESD failure threshold of silicided n-MOS output transistors by ensuring uniform current flow

T. Polgreen, Amitava Chatterjee · IEEE Transactions on Electron Devices · 1992 · 156 citations

Engineering, Electrical Engineering, Electronic Materials +16

A Global Assessment of Recent Stress (GARS) Scale

Margaret W. Linn · The International Journal of Psychiatry in Medicine · 1986 · 108 citations

Social Sciences, Behavioral Sciences, Psychology +12

Electromigration in flip chip solder joints having a thick Cu column bump and a shallow solder interconnect

Jae-Woong Nah, Jong-ook Suh, K. N. Tu et al. · Journal of Applied Physics · 2006 · 99 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

1–5 of 232

Authors

991

EZ
Enrico Zanoni
University of Padua, Italy
12 publications · 283 citations
11
h-index
GM
Gaudenzio Meneghesso
University of Padua, Italy
10 publications · 235 citations
10
h-index
NC
N.W. Cheung
University of California, Berkeley, United States
10 publications · 347 citations
10
h-index
CH
Chenming Hu
University of California, Berkeley, United States
10 publications · 264 citations
10
h-index
MM
Matteo Meneghini
University of Padua, Italy
6 publications · 139 citations
6
h-index

1–5 of 991

Institutions

248

1–8 of 248

Venues

IEEE Transactions on Electron Devices
26 publications · 943 citations
18
h-index
IEEE Electron Device Letters
20 publications · 615 citations
15
h-index
Microelectronics Reliability
20 publications · 396 citations
14
h-index
Journal of Applied Physics
8 publications · 297 citations
8
h-index
Applied Physics Letters
6 publications · 1.5K citations
6
h-index

1–5