Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries

Inductively coupled plasma etching of GaN

R. J. Shul, G McClellan, S.A. Casalnuovo et al. · Applied Physics Letters · 1996 · 214 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reactive ion etching of GaN using BCl3

Mao Lin, Zhaoyan Fan, Zhongqi Ma et al. · Applied Physics Letters · 1994 · 213 citations

Engineering, Materials Engineering, Materials Science +17

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

S.A. Smith, Colin A. Wolden, M. D. Bremser et al. · Applied Physics Letters · 1997 · 175 citations

Engineering, Materials Engineering, Materials Science +17

Two-dimensional fluid model of high density inductively coupled plasma sources

Rodney A. Stewart, P. Vitello, David B. Graves · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 146 citations

Natural Sciences, Physics, Computational Fluid Dynamics +16

High-density plasma etching of compound semiconductors

R. J. Shul, G McClellan, R. D. Briggs et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 122 citations

Engineering, Materials Engineering, Materials Science +17