R. D. Briggs

A survey of ohmic contacts to III-V compound semiconductors

Albert G. Baca, F. Ren, J.C. Zolper et al. · Thin Solid Films · 1997 · 231 citations

Semiconductors, Electrical Engineering, Engineering +4

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, Jong Su KIM et al. · Applied Physics Letters · 2002 · 173 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

High-density plasma etching of compound semiconductors

R. J. Shul, G McClellan, R. D. Briggs et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 121 citations

Semiconductors, Materials Science, Electrical Engineering +12

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

B. Luo, F. Ren, Robert Fitch et al. · Applied Physics Letters · 2003 · 39 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

J. W. Johnson, Albert G. Baca, R. D. Briggs et al. · Solid-State Electronics · 2001 · 35 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gate Length +7