R. D. Briggs

A survey of ohmic contacts to III-V compound semiconductors

Albert G. Baca, F. Ren, J.C. Zolper et al. · Thin Solid Films · 1997 · 236 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, Jong Su KIM et al. · Applied Physics Letters · 2002 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

High-density plasma etching of compound semiconductors

R. J. Shul, G McClellan, R. D. Briggs et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 122 citations

Engineering, Materials Engineering, Materials Science +17

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

B. Luo, F. Ren, Robert Fitch et al. · Applied Physics Letters · 2003 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

J. W. Johnson, Albert G. Baca, R. D. Briggs et al. · Solid-State Electronics · 2001 · 35 citations

Engineering, Electrical Engineering, Materials Science +12