Publication | Open Access
Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application
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Citations
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References
2018
Year
Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringOptical PropertiesApplied PhysicsPower Device ApplicationGan Power DeviceNearly-zero Valence BandLarge Conduction BandCategoryiii-v SemiconductorOptoelectronics
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