Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

Abstract

This paper presents the performance, reliability and ruggedness characterization of 1200V, 80mΩ rated SiC planar gate MOSFETs, fabricated in a high volume, 150mm silicon CMOS foundry. The devices showed a specific on-resistance of 5.1 mΩ.cm 2 at room temperature, increasing to 7.5 mΩ.cm 2 at 175 °C. Total switching losses were less than 300μJ (V DD = 800V, I D = 20A). The devices showed excellent gate oxide reliability with V TH shifts under 0.2V for extended HTGB stress testing at 175 °C for up to 5500 hours (V GS = 25V) and 2500 hours (V GS = -10V). Ruggedness performance such as unclamped inductive load switching and short circuit capability are also discussed.