Concepedia

Improved Dynamic R<sub>ON</sub> of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch

Dong Ji, Wenwen Li, Anchal Agarwal, Silvia H. Chan, J. Robert Haller, Davide Bisi, Michelle Labrecque, Chirag Gupta, Bill Cruse, Rakesh Lal,

IEEE Electron Device Letters · 2018 · 39 citations · 20 references

DOI

Concepts

Abstract

This letter reports on the dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\text{ON}}$ </tex-math></inline-formula> performance of large-area GaN vertical trench MOSFETs (OG-FETs) fabricated on bulk GaN substrates. OG-FETs demonstrated excellent DC performance with a breakdown voltage of 900 V and a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\text{ON}}$ </tex-math></inline-formula> of 4.1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega$ </tex-math></inline-formula> (8.2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot \text {cm}^{2}$ </tex-math></inline-formula> ). However, damage to the trench sidewalls caused by RIE dry etching led to poor dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\text{ON}}$ </tex-math></inline-formula> performance. An improved dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\text{ON}}$ </tex-math></inline-formula> performance was achieved by following the RIE dry etch with a TMAH wet etch. With this process combination, the dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\text{ON}}$ </tex-math></inline-formula> was reduced by more than 10 times compared with the dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\text{ON}}$ </tex-math></inline-formula> in devices fabricated by dry etch only.

References

20

1.8 mΩ·cm<sup>2</sup>vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

Tohru OKA, Tsutomu Ina, Yukihisa Ueno et al. · Applied Physics Express · 2015 · 339 citations

, , +9

1.5-kV and 2.2-m&lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;\(\Omega \) &lt;/tex-math&gt;&lt;/inline-formula&gt;-cm&lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;\(^{2}\) &lt;/tex-math&gt;&lt;/inline-formula&gt; Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez et al. · IEEE Electron Device Letters · 2014 · 333 citations

, , +11

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

Min Sun, Yuhao Zhang, Xiang Gao et al. · IEEE Electron Device Letters · 2017 · 263 citations

, , +12

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Masahito Kodama, M. Sugimoto, Eiko Hayashi et al. · Applied Physics Express · 2008 · 258 citations

, , +11

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson et al. · IEEE Electron Device Letters · 2011 · 178 citations

, , +11