Development of thin quartz glass utilising through‐glass‐via (TGV) formation by dry etching technology

Abstract

The manufacturing process of through‐glass‐via (TGV) structure and direct implications on the design of quartz‐based interposer applications for three‐dimensional integrated circuit packaging technology is presented. First detailed substrate thickness formed by dry etching with various associated structures based on the use of thin quartz as a substrate material was analysed. Then, the holes etched in glass wafers by photolithography and inductively coupled plasma‐reactive ion etching techniques was evaluated. The fabricated TGV morphology showed an excellent characterisation between substrate thickness, via diameter, and via shape for a vertical interposer. Finally, TGV structure with a diameter of 50 µm × 150 µm thin quartz wafer exhibit high usability for thin wafer processing with the optimised fabrication parameters was obtained.