On the turn-around phenomenon in n-MOS transistors under NBTI conditions

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken, H.E. Maes, N. Beltran et al. · IEEE Transactions on Electron Devices · 1984 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices

Kjell Jeppson, Christer Svensson · Journal of Applied Physics · 1977 · 678 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures

F. B. McLean · IEEE Transactions on Nuclear Science · 1980 · 580 citations · Full text

Engineering, Materials Engineering, Materials Science +17

NBTI degradation: From physical mechanisms to modelling

V. Huard, M. Denais, C. Parthasarathy · Microelectronics Reliability · 2005 · 503 citations

Engineering, Electrical Engineering, Electronic Materials +10

Negative bias temperature instability: What do we understand?

D.K. Schroder · Microelectronics Reliability · 2006 · 383 citations

Natural Sciences, Geophysics, Thermal Analysis +5