Boualem Djezzar

Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET devices at low gamma ray radiation doses

Boualem Djezzar, A. Smatti, A. Amrouche et al. · IEEE Transactions on Nuclear Science · 2000 · 40 citations

Medicine, Electrical Engineering, Radiation Dosimetry +15

A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

Boualem Djezzar, A. Smatti, Slimane Oussalah · IEEE Transactions on Nuclear Science · 2004 · 33 citations

Engineering, Accounting, Radiation Measurement +15

A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

Boualem Djezzar, Slimane Oussalah, A. Smatti · IEEE Transactions on Nuclear Science · 2004 · 33 citations

Engineering, Electrical Engineering, Radiation Measurement +15

Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field

Cherifa Tahanout, Mohamed Boubaaya, Boualem Djezzar et al. · IEEE Transactions on Device and Materials Reliability · 2017 · 31 citations

Engineering, Electrical Engineering, Microelectronics +16

Why Is Oxide-Trap Charge-Pumping Method Appropriate for Radiation-Induced Trap Depiction in MOSFET?

Boualem Djezzar, Hakim Tahi, A. Mokrani · IEEE Transactions on Device and Materials Reliability · 2009 · 24 citations

Engineering, Electrical Engineering, Microelectronics +14