Abdelmadjid Benabdelmoumene

Recovery investigation of NBTI-induced traps in n-MOSFET devices

Boualem Djezzar, Abdelmadjid Benabdelmoumene, Boumediene Zatout et al. · Microelectronics Reliability · 2020 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +14

A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor

Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene et al. · Solid-State Electronics · 2013 · 21 citations

Engineering, Electrical Engineering, Materials Science +13

A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene · Microelectronics Reliability · 2012 · 16 citations

Engineering, Electrical Engineering, Microelectronics +11

Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene et al. · Microelectronics Reliability · 2014 · 14 citations

Engineering, Electrical Engineering, Materials Science +16

On the turn-around phenomenon in n-MOS transistors under NBTI conditions

Abdelmadjid Benabdelmoumene, Boualem Djezzar, Amel Chenouf et al. · Solid-State Electronics · 2016 · 14 citations

Engineering, Electrical Engineering, Physics +12