IEEE Transactions on Electron Devices · 2009 · 41 citations · 11 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice SimulationSemiconductor HeterostructuresWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsEpitaxial MaterialsGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-electron-mobility TransistorsIntermodulation DistortionThird-order Distortion
This paper presents an effective method of improving the linearity of GaN/AlGaN high-electron mobility transistors (HEMTs) by optimizing barrier (AlGaN Layer) thickness or implementing doped GaN cap or a combination of both. HEMT devices with different epitaxial structures were simulated, fabricated, and measured to demonstrate this. Third-order intermodulation distortion and adjacent channel power ratio measurements were performed in order to compare linearity experimentally. A significant improvement of linearity is observed for an optimized architecture.
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