Ibrahim Khalil

GaN HEMT Potential for Low-Noise Highly Linear RF Applications

Ibrahim Khalil, Armin Liero, Matthias Rudolph et al. · IEEE Microwave and Wireless Components Letters · 2008 · 47 citations

Engineering, Electrical Engineering, Electronic Materials +16

Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

Ibrahim Khalil, Eldad Bahat‐Treidel, Frank Schnieder et al. · IEEE Transactions on Electron Devices · 2009 · 41 citations

Engineering, Electrical Engineering, Electronic Materials +16

Highly robust X-band LNA with extremely short recovery time

Matthias Rudolph, Mike Dewitz, Armin Liero et al. · 2009 · 27 citations

Engineering, Electrical Engineering, Electronic Materials +16

Carrier aggregation for MMW inter-RAT and intra-RAT in next generation heterogeneous mobile data network based on optical domain band mapping

Junwen Zhang, Mu Xu, Jing Wang et al. · 2015 · 11 citations

Computing, Communication, Electrical Engineering +14