IEEE Electron Device Letters · 2006 · 28 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsInterface EngineeringSemiconductor InterfacesSemiconductor SurfacesSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsFilm ThicknessGate Dielectric EngineeringGate Oxide Thickness EffectsGate Stack EngineeringSilicon Thin FilmsThin-film Interface EngineeringWork FunctionWork Function Tuning
The impact of TiN film thickness variations on the effective work function (WF) of poly-Si/TiN/SiO/sub 2/ and poly-Si/TiN/HfSiON interfaces has been investigated. The electrical signatures of these gate stacks indicate that the concentration of Hf-Ti and Ti-Si bonds at the (poly-Si/TiN)/HfSiON and (poly-Si/TiN)/SiO/sub 2/ interface plays a significant role on the control of the gate stacks' WF. The density of these interfacial bonds and the related work function changes are correlated to the degree of nucleation of the TiN film on the dielectric.
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Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions
H.Y. Yu, C. Ren, Yee‐Chia Yeo et al. · IEEE Electron Device Letters · 2004 · 131 citations