R. Singanamalla

A Low-Power Multi-Gate FET CMOS Technology with 13.9ps Inverter Delay, Large-Scale Integrated High Performance Digital Circuits and SRAM

K. von Arnim, E. Augendre, A.C. Pacha et al. · 2007 · 76 citations

Engineering, Computer Engineering, Electrical Engineering +15

Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

Nadine Collaert, M. Demand, Isabelle Ferain et al. · 2005 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

R. Singanamalla, H.Y. Yu, Benny Van Daele et al. · IEEE Electron Device Letters · 2007 · 30 citations

Engineering, Electrical Engineering, Materials Science +13

Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics

P. Srinivasan, E. Simôen, R. Singanamalla et al. · Solid-State Electronics · 2006 · 28 citations

Engineering, Electrical Engineering, Materials Science +14

On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO/sub 2/ and poly-Si/TiN/HfSiON gate stacks

R. Singanamalla, H.Y. Yu, Geoffrey Pourtois et al. · IEEE Electron Device Letters · 2006 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +17