2002 · 35 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignCurrent-voltage CharacteristicsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsPhysical DesignVoltage ScalingBipolar Junction Transistor BiasingBody BiasingBody EffectDynamic Threshold Voltage ScalingThreshold VoltageThreshold Voltage ControlThreshold Voltage ModelingThreshold Voltage Scaling
Partially-depleted (PD) SOI MOSFETs offer improved threshold control and sensitivity over fully depleted devices, but the effects of dynamic floating-body charging on the threshold voltage VT(t) can possibly lead to instabilities in PD/SOI circuits. We show in this paper that the dynamic charging of the body can also induce a parasitic bipolar-transistor (BJT) transient current which can be significant even at low voltages well below the drain-source breakdown defined by the BJT. Our results indicate that if device/circuit design allows substantial variation of the body charge, then the transient BJT current could be large enough to upset the logic or memory (SRAM or DRAM) function of a chip. They further show that such an upset becomes more probable as the device is scaled, and they give insight regarding device and circuit design to reduce the probability.
4
A room temperature 0.1 μm CMOS on SOI
G. Shahidi, Clint Anderson, B.A. Chappell et al. · IEEE Transactions on Electron Devices · 1994 · 80 citations
Engineering, Computer Engineering, Electrical Engineering +16