IEEE Electron Device Letters · 1995 · 74 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingIntegrated Circuit DevicesTemperature MeasurementThermal Properties Of SemiconductorsGate Oxide InterfacesSelf-heating EffectsSemiconductor Device CharacterizationSilicon CharacterizationSilicon-on-insulator TechnologyTemperature Dependence MeasurementTemperature Dependence Of I-v CurvesThermal Effects In Integrated Circuits
A new method for measuring the output (I/sub D/-V/sub D/) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 μm bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of DC power is also illustrated.
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Measurement and modeling of self-heating in SOI nMOSFET's
L.T. Su, J.E. Chung, D.A. Antoniadis et al. · IEEE Transactions on Electron Devices · 1994 · 331 citations
Monitoring the temperature rise in SOI transistors by measurement of leakage current
Liam McDaid, S. Hall, W. Eccleston et al. · 2002 · 19 citations