IEEE Electron Device Letters · 1992 · 43 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingNoise In Electronic DevicesNoise In Semiconductor DevicesThermal Properties Of SemiconductorsThin-film TransistorsDevice Noise CharacterizationMosfet NoiseNoise ThermometrySelf-heating EffectsSelf-heating ModelingSilicon-on-insulator TechnologyThermal Effects In Integrated CircuitsVoltage
The authors report the direct measurement of the silicon island temperature in both long and submicrometer thin-film silicon-on-insulator (SOI) MOSFETs as a function of bias conditions using noise thermometry. They show that the device island temperature increases with drain voltage and that this results in a reduction of drain current. Using standard models of the drain current and velocity/field expression, they show that a thermally induced fall in mobility quantitatively accounts for the loss in drain current drive observed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Noise in Electronic Devices and Systems
H. Sutcliffe · Electronics and Power · 1984 · 251 citations
Physical origin of negative differential resistance in SOI transistors
Liam McDaid, Steven Hall, Phil Mellor et al. · Electronics Letters · 1989 · 118 citations
Engineering, Electrical Engineering, Condensed Matter Physics +15