Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFETs

Abstract

The authors report the direct measurement of the silicon island temperature in both long and submicrometer thin-film silicon-on-insulator (SOI) MOSFETs as a function of bias conditions using noise thermometry. They show that the device island temperature increases with drain voltage and that this results in a reduction of drain current. Using standard models of the drain current and velocity/field expression, they show that a thermally induced fall in mobility quantitatively accounts for the loss in drain current drive observed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>