S. Krishnan

Improvement of surface carrier mobility of HfO/sub 2/ MOSFETs by high-temperature forming gas annealing

K. Onishi, Chang Seok Kang, Rino Choi et al. · IEEE Transactions on Electron Devices · 2003 · 103 citations

Materials Science, Electrical Engineering, Engineering +14

Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high- <i>K</i> gate dielectrics

Geoffrey Yeap, S. Krishnan, Ming-Ren Lin · Electronics Letters · 1998 · 85 citations

Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates

Sundararaman Gopalan, K. Onishi, R. Nieh et al. · Applied Physics Letters · 2002 · 46 citations

Engineering, Thin Film Process Technology, Silicon On Insulator +16

SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation

A.T. Krishnan, V. Reddy, D. Aldrich et al. · 2006 · 44 citations

Device Modeling, Electrical Engineering, Engineering +13

Physical modeling of temperature dependences of SOI CMOS devices and circuits including self-heating

G.O. Workman, J.G. Fossum, S. Krishnan et al. · IEEE Transactions on Electron Devices · 1998 · 38 citations

Engineering, Vlsi Design, Soi Cmos Devices +17