Geoffrey Yeap

5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm² SRAM cells for Mobile SoC and High Performance Computing Applications

Geoffrey Yeap · 2019 · 89 citations

Engineering, Vlsi Design, Computer Architecture +22

Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high- <i>K</i> gate dielectrics

Geoffrey Yeap, S. Krishnan, Ming-Ren Lin · Electronics Letters · 1998 · 85 citations

Smart mobile SoCs driving the semiconductor industry: Technology trend, challenges and opportunities

Geoffrey Yeap · 2013 · 60 citations

Engineering, Computer Architecture, Education +19

15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V_MIN Applications

Jonathan Chang, Yen-Huei Chen, Gary Chan et al. · 2020 · 47 citations

Engineering, Vlsi Design, Sram Bit Cell +16

Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology

Younghwi Yang, Juhyun Park, Seung Chul Song et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2014 · 46 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +12