Electronics Letters · 1998 · 85 citations · 1 references
Fringing-induced barrier lowering (FIBL), a new anomalous degradation in device turn-off/on characteristics in sub-100 nm devices with high-K gate dielectrics, is reported. FIBL is clearly evident for K > 25 and worsens as K increases (without buffer oxide). With a buffer oxide, FIBL can be completely suppressed for K < 25, and partially for higher K. FIBL worsens as the gate length becomes shorter. Complete removal of high-K dielectrics on the active area induces a smaller FIBL.
1