G.O. Workman

A 22nm FDSOI Technology Optimized for RF/mmWave Applications

Shao-er Ong, Steffen Lehmann, W.H. Chow et al. · 2018 · 144 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +13

A process/physics-based compact model for nonclassical CMOS device and circuit design

J.G. Fossum, Lixin Ge, Meng‐Hsueh Chiang et al. · Solid-State Electronics · 2004 · 104 citations

Device Modeling, Electrical Engineering, Physical Design (Electronics) +13

CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)

L. Mathew, Yaping Du, Aaron Thean et al. · 2005 · 85 citations

Electrical Engineering, Engineering, Migfet Mixer +9

A Surface Potential-Based Compact Model of n-MOSFET Gate-Tunneling Current

Xin Gu, T.-L. Chen, G. Gildenblat et al. · IEEE Transactions on Electron Devices · 2004 · 55 citations

Device Modeling, Aggressive Scaling, Electrical Engineering +13

Physical noise modeling of SOI MOSFETs with analysis of the Lorentzian component in the low-frequency noise spectrum

G.O. Workman, J.G. Fossum · IEEE Transactions on Electron Devices · 2000 · 39 citations

Engineering, Silicon On Insulator, Noise Reduction +16