Steffen Lehmann

A 22nm FDSOI Technology Optimized for RF/mmWave Applications

Shao-er Ong, Steffen Lehmann, W.H. Chow et al. · 2018 · 144 citations

Engineering, Electrical Engineering, Microelectronics +16

A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation

M. Schröter, Steffen Lehmann, Sébastien Frégonèse et al. · IEEE Transactions on Electron Devices · 2006 · 36 citations

Engineering, Computer Engineering, Electrical Engineering +16

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

Hung-Chi Han, Farzan Jazaeri, Antonio D’Amico et al. · Solid-State Electronics · 2022 · 32 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results

Sébastien Frégonèse, Steffen Lehmann, Thomas Zimmer et al. · IEEE Transactions on Electron Devices · 2006 · 27 citations

Engineering, Electrical Engineering, Circuit Theory +16

SiGe HBT modeling for mm-wave circuit design

Andreas Pawlak, Steffen Lehmann, P. Sakalas et al. · 2015 · 19 citations

Engineering, Electrical Engineering, Microelectronics +16