IEEE Transactions on Electron Devices · 2006 · 36 citations · 11 references
EngineeringComputer EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesBipolar Junction TransistorsCmos Circuit DesignDevice ModelingDevice SimulationIntegrated Circuit DesignBipolar Junction Transistor ModelingBipolar Junction Transistor SimulationCircuit ModelingCircuit SimulationCompact Device ModelingCompact ModelingElectric Circuit ModelsPhysics-based Device Modeling
The paper presents a compact bipolar transistor model that merges the simplicity of the SPICE Gummel‑Poon model with key features of HICUM, and derives its fundamental equations. The model is formulated and implemented in Verilog‑A, compiled for use in commercial circuit simulators, enabling large‑scale circuit simulation. The resulting HICUM/L0 model is more physics‑based and accurate than SGPM while remaining computationally efficient for large‑scale simulations, with experimental validation presented in Part II.
A compact bipolar transistor model is presented that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM and at the same time, from a computational point of view, suitable for simulating large circuits. The new model has been implemented in Verilog-A and, as compiled code, in various commercial circuit simulators. In Part I, the fundamental model formulation is presented along with a derivation of the most important equations. Experimental results are shown in Part II.
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A Charge Control Relation for Bipolar Transistors
H.K. Gummel · Bell System Technical Journal · 1970 · 172 citations
ADMS-automatic device model synthesizer
L. Lemaître, Colin C. McAndrew, Silke Hamm · 2003 · 61 citations
Engineering, Computer Engineering, Electrical Engineering +17