Concepedia

K. Onishi

KO

Statistics

Publications

16

Citations

900

H-Index

15

Active since

2000

Affiliations

The University of Texas at Austin(Current)

IBM (United States)

K. Onishi is an author at The University of Texas at Austin specializing in electrical engineering, semiconductor device materials, and engineering.

Publications per year

2000–2012

16

Publications

16

Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

Laegu Kang, Byoung Hun Lee, Wenjie Qi et al. · IEEE Electron Device Letters · 2000 · 241 citations

Engineering, Electrical Engineering, Materials Science +17

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

P. Agnello, T. Ivers, C. Warm et al. · 2006 · 115 citations

Engineering, Computer Engineering, Electrical Engineering +17

Improvement of surface carrier mobility of HfO/sub 2/ MOSFETs by high-temperature forming gas annealing

K. Onishi, Chang Seok Kang, Rino Choi et al. · IEEE Transactions on Electron Devices · 2003 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried et al. · 2012 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +17

Structural and electrical properties of HfO<sub>2</sub> with top nitrogen incorporated layer

Hag-Ju Cho, Chang Seok Kang, K. Onishi et al. · IEEE Electron Device Letters · 2002 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

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