Concepedia

Threshold Voltage Control

Threshold Voltage Control is a semiconductor device engineering technique that belongs to the class of CMOS fabrication methodologies, specifically distinguished by its deliberate modulation of the gate voltage required to induce a conductive channel in a transistor, thereby enabling optimization of power consumption, switching speed, and device reliability in integrated circuit design.

563

Publications

21.8K

Citations

2.5K

Authors

446

Institutions

Publications per year

2017–2026

116

Parents

Publications

563

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

, , +17

A 0.9-V, 150-MHz, 10-mW, 4 mm/sup 2/, 2-D discrete cosine transform core processor with variable threshold-voltage (VT) scheme

Tadahiro Kuroda, Takeshi Fujita, S. Mita et al. · IEEE Journal of Solid-State Circuits · 1996 · 473 citations

, , +17

Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

Cheng Song, Bin Cui, Fan Li et al. · Progress in Materials Science · 2017 · 451 citations · Full text

, , +14

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

Tohru OKA, Tomohiro Nozawa · IEEE Electron Device Letters · 2008 · 392 citations

, , +17

Short-channel effects in SOI MOSFETs

S. Veeraraghavan, J.G. Fossum · IEEE Transactions on Electron Devices · 1989 · 304 citations

, , +17

1–5 of 563

Authors

2.5K

  1. MM
    Meishoku Masahara

    National Institute of Advanced Industrial Science and Technology, Japan

    9 publications · 382 citations

    9

    h-index

  2. YL
    Yongxun Liu

    National Institute of Advanced Industrial Science and Technology, Japan

    8 publications · 349 citations

    8

    h-index

  3. KE
    Kazuhiko Endo

    National Institute of Advanced Industrial Science and Technology, Japan

    8 publications · 372 citations

    8

    h-index

  4. TM
    Takashi Matsukawa

    National Institute of Advanced Industrial Science and Technology, Japan

    7 publications · 278 citations

    7

    h-index

  5. TK
    Tadahiro Kuroda

    Keio University, Japan

    7 publications · 897 citations

    7

    h-index

1–5 of 2.5K

Institutions

446

  1. Toshiba (Japan)

    Tokyo, Japan

    18 h-index

    128 publications

    14.3K citations

  2. Hitachi (Japan)

    Tokyo, Japan

    16 h-index

    95 publications

    3.8K citations

  3. Hong Kong University of Science and Technology

    Hong Kong, Hong Kong

    14 h-index

    37 publications

    1.1K citations

  4. National Institute of Advanced Industrial Science and Technology

    Tsukuba, Japan

    14 h-index

    119 publications

    5.1K citations

  5. The University of Tokyo

    Tokyo, Japan

    13 h-index

    56 publications

    3.1K citations

  6. IBM (United States)

    Armonk, United States

    13 h-index

    57 publications

    2.4K citations

  7. Samsung (South Korea)

    Seoul, South Korea

    13 h-index

    105 publications

    4.1K citations

  8. IMEC

    Leuven, Belgium

    12 h-index

    103 publications

    3.7K citations

1–8 of 446

Venues

  1. IEEE Transactions on Electron Devices

    57 publications · 3.2K citations

    31

    h-index

  2. IEEE Electron Device Letters

    46 publications · 2K citations

    26

    h-index

  3. Applied Physics Letters

    41 publications · 1.9K citations

    24

    h-index

  4. IEEE Journal of Solid-State Circuits

    22 publications · 2.1K citations

    20

    h-index

  5. Solid-State Electronics

    16 publications · 422 citations

    12

    h-index

1–5