Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance

Measurement of the effect of self-heating in strained-silicon MOSFETs

K.A. Jenkins, K. Rim · IEEE Electron Device Letters · 2002 · 151 citations

Engineering, Electrical Engineering, Materials Science +17

Strain relaxation of pseudomorphic /(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

B. Holländer, St. Lenk, S. Mantl et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 70 citations

Natural Sciences, Materials Engineering, Materials Science +17

Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

S. Mantl, B. Holländer, R. Liedtke et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 57 citations

Natural Sciences, Materials Engineering, Materials Science +16

High-frequency SiGe-n-MODFET for microwave applications

M. Zeuner, T. Hackbarth, G. Höck et al. · IEEE Microwave and Guided Wave Letters · 1999 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

F. Aniel, M. Enciso-Aguilar, L. Giguerre et al. · Solid-State Electronics · 2002 · 32 citations

Engineering, Electrical Engineering, Materials Science +14