High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET - Concepedia

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High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

32

Citations

6

References

2002

Year

F. Aniel, M. Enciso-Aguilar, L. Giguerre, P. Crozat, R. Adde, T. Mack, U. Seiler, Th. Hackbarth, H.-J. Herzog, U. König,

Solid-State Electronics

Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilityApplied PhysicsHigh Performance 100Silicon On InsulatorMicroelectronicsSemiconductor Device

References

	Year	Citations

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