M. Enciso-Aguilar

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

F. Aniel, M. Enciso-Aguilar, L. Giguerre et al. · Solid-State Electronics · 2002 · 32 citations

Electrical Engineering, Engineering, Nanoelectronics +6

Structure and mechanism formation of polyelectrolyte complex obtained from PSS/PAH system: effect of molar mixing ratio, base–acid conditions, and ionic strength

César Márquez‐Beltrán, L. Castañeda, M. Enciso-Aguilar et al. · Colloid & Polymer Science · 2012 · 27 citations

Polyelectrolyte Complex, Chemical Engineering, Pss/pah System +8

0.3 dB minimum noise figure at 2.5 GHz of 0.13µm Si/Si _0.58 Ge _0.42 n-MODFETs

M. Enciso-Aguilar, F. Aniel, P. Crozat et al. · Electronics Letters · 2001 · 22 citations

Development and characterization of cyclic olefin copolymer thin films and their dielectric characteristics as CPW substrate by means of Terahertz Time Domain Spectroscopy

L.M. Diaz-Albarran, E. Lugo-Hernández, Eloy Ramírez‐García et al. · Microelectronic Engineering · 2018 · 22 citations

Materials Science, Copolymer Thin Films, Engineering +11

DC and high frequency performance of 0.1  <b>µ</b> m <i>n</i> -type Si/Si _0.6 Ge _0.4 MODFET with <i>f</i> _MAX =188 GHz at 300K and <i>f</i> _MAX =230 GHz at 50K

M. Enciso-Aguilar, F. Aniel, P. Crozat et al. · Electronics Letters · 2003 · 21 citations