F. Aniel - Concepedia

Author

F. Aniel

Université Paris-Sud

Also Known As

Aniel, F., Aniel, Frédéric, F Aniel, F P Aniel, F. Aniel, Frederic Aniel, Frederic P. Aniel, Frédéric Aniel, Levard, H.

161

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Université Paris-Sud Centre National de la Recherche Scientifique STMicroelectronics (France)Daimler (Germany)Université Paris-Saclay

About

F. Aniel is an author at Université Paris-Sud specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	39	1K
2	Applied Physics	18	34	874
3	Electrical Engineering	18	32	811
4	Computer Engineering	3	3	72
5	Natural Sciences	2	2	39

F. Aniel

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Complex permittivity characterization of benzocyclobutene for terahertz applications Etienne Perret, N. Zerounian, Sylvain David, Microelectronic Engineering Thz PhotonicsElectrical EngineeringTerahertz SpectroscopyEngineeringApplied Physics	2008	79
Recent advances in germanium emission [Invited] P. Boucaud, M. El Kurdi, A. Ghrib, Photonics Research Optical MaterialsEngineeringAtomic Emission SpectroscopyCompact Germanium EmittersElectron Spectroscopy	2013	78
Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition T. Brunhes, P. Boucaud, S. Sauvage, Applied Physics Letters EngineeringOptoelectronic DevicesSilicon On InsulatorSemiconductor NanostructuresSemiconductors	2000	67
230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications P. Chevalier, C. Fellous, Laurent Rubaldo, IEEE Journal of Solid-State Circuits PhotonicsElectrical EngineeringMillimeter Wave TechnologySelective Epitaxial GrowthEngineering	2005	62
Energy-band structure in strained silicon: A 20-band k⋅p and Bir–Pikus Hamiltonian model Soline Boyer‐Richard, F. Aniel, G. Fishman, Journal of Applied Physics Materials ScienceSemiconductorsBir–pikus Hamiltonian ModelEnergy Band GapEngineering	2003	59
Direct and indirect band gap room temperature electroluminescence of Ge diodes M. de Kersauson, R. Jakomin, M. El Kurdi, Journal of Applied Physics SemiconductorsRoom Temperature ElectroluminescenceElectrical EngineeringOptical MaterialsEngineering	2010	56
High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges P. Chevalier, B. Barbalat, M. Laurens, Electrical CharacteristicsPhotonicsElectrical Engineering120-Nm StatusEngineering	2007	35
Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's F. Aniel, N. Zerounian, R. Adde, IEEE Transactions on Electron Devices EngineeringSi/si/sub 0.55/Ge/subSilicon On InsulatorSemiconductor DeviceLow Temperature	2000	34
Coupling 3-D Maxwell's and Boltzmann's equations for analyzing a terahertz photoconductive switch M. Sirbu, Sébastien Lepaul, F. Aniel IEEE Transactions on Microwave Theory and Techniques Thz PhotonicsEngineeringElectromagnetic PulseTerahertz PhotonicsElectric Pulse	2005	33
High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET F. Aniel, M. Enciso-Aguilar, L. Giguerre, Solid-State Electronics Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilityApplied Physics	2002	32

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