R. Adde

Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's

F. Aniel, N. Zerounian, R. Adde et al. · IEEE Transactions on Electron Devices · 2000 · 34 citations

Engineering, Si/si/sub 0.55/Ge/sub, Silicon On Insulator +16

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

F. Aniel, M. Enciso-Aguilar, L. Giguerre et al. · Solid-State Electronics · 2002 · 32 citations

Electrical Engineering, Engineering, Nanoelectronics +6

Technical note

J. Pontnau, R. Adde · Journal of Physics and Chemistry of Solids · 1975 · 32 citations

Linewidth of the Radiation Emitted by a Josephson Point Contact

Guy Vernet, R. Adde · Applied Physics Letters · 1971 · 23 citations

Categoryquantum Electronics, Electrical Engineering, Josephson Junctions +11

Large amplitude picosecond step generation with FETs

A. Ouslimani, Guy Vernet, H. Hafdallah et al. · Electronics Letters · 1990 · 22 citations

Photonics, Electrical Engineering, Fet Potential +14