G. Höck

High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

G. Höck, E. Kohn, C. Rosenblad et al. · Applied Physics Letters · 2000 · 76 citations

Semiconductors, High Hole Mobility, Electrical Engineering +10

Low energy plasma enhanced chemical vapor deposition

Martin Kummer, C. Rosenblad, Alex Dommann et al. · Materials Science and Engineering B · 2002 · 58 citations

Engineering, Low Energy Plasma, Low-temperature Plasmas +5

High performance 0.25 µm <i>p</i> -type Ge/SiGeMODFETs

G. Höck, T. Hackbarth, U. Erben et al. · Electronics Letters · 1998 · 49 citations

Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications

G. Höck, Michael Glück, T. Hackbarth et al. · Thin Solid Films · 1998 · 40 citations

Electrical Engineering, Si1−xgex Heterostructures, Engineering +6

n- and p-Type SiGe HFETs and circuits

U. König, M. Zeuner, G. Höck et al. · Solid-State Electronics · 1999 · 33 citations

Electrical Engineering, Engineering, Nanoelectronics +4