n- and p-Type SiGe HFETs and circuits

Band alignments of coherently strained Ge<i>x</i>Si1−<i>x</i>/Si heterostructures on 〈001〉 Ge<i>y</i>Si1−<i>y</i> substrates

R. People, J. C. Bean · Applied Physics Letters · 1986 · 317 citations

Natural Sciences, Materials Science, Physics +17

Determination of electrical transport properties using a novel magnetic field-dependent Hall technique

W. Beck, J. R. Anderson · Journal of Applied Physics · 1987 · 255 citations

Natural Sciences, Electrical Engineering, Physics +17

The n-channel SiGe/Si modulation-doped field-effect transistor

Heinrich Daembkes, H.-J. Herzog, H. Jorke et al. · IEEE Transactions on Electron Devices · 1986 · 194 citations

Engineering, Electrical Engineering, Materials Science +17

Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

K. Ismail, Shelby F. Nelson, J. O. Chu et al. · Applied Physics Letters · 1993 · 169 citations

Engineering, Materials Engineering, Materials Science +17

Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors

A. Sadek, K. Ismail, M Armstrong et al. · IEEE Transactions on Electron Devices · 1996 · 83 citations

Engineering, Computer Engineering, Electrical Engineering +17