Statistics
Publications
63
Citations
3.2K
H-Index
29
Active since
1988
K. Ismail is an author at IBM Research - Thomas J. Watson Research Center specializing in semiconductor materials, materials science, and semiconductor physics.
Publications per year
1988–2025
63
63
Extremely high electron mobility in Si/SiGe modulation-doped heterostructures
K. Ismail, M. Arafa, K. L. Saenger et al. · Applied Physics Letters · 1995 · 223 citations
High hole mobility in SiGe alloys for device applications
K. Ismail, J. O. Chu, B.S. Meyerson · Applied Physics Letters · 1994 · 162 citations
High electron mobility in modulation-doped Si/SiGe
K. Ismail, B.S. Meyerson, P. J. Wang · Applied Physics Letters · 1991 · 155 citations
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