K. Ismail - Concepedia

Author

K. Ismail

IBM Research - Thomas J. Watson Research Center

Also Known As

D. Hutter, Ismail, K., K Ismail, K. Ismail, Kalith M. Ismail, Kamal Batcha Mohamed Ismail, Kurnool Mahammed Ismail

118

Publications

3.5K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center Massachusetts Institute of Technology IBM (United States)Cairo University University of Illinois Urbana-Champaign

About

K. Ismail is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	58	3K
2	Applied Physics	28	57	3K
3	Natural Sciences	6	6	410
4	Chemistry	2	2	168
5	Computer Engineering	1	1	15

K. Ismail

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
Extremely high electron mobility in Si/SiGe modulation-doped heterostructures K. Ismail, M. Arafa, K. L. Saenger, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringModulation-doped Si/sigeEngineering	1995	223
Electron transport properties of Si/SiGe heterostructures: Measurements and device implications K. Ismail, Shelby F. Nelson, J. O. Chu, Applied Physics Letters SemiconductorsSpacer Layer ThicknessElectrical EngineeringElectronic DevicesEngineering	1993	168
High hole mobility in SiGe alloys for device applications K. Ismail, J. O. Chu, B.S. Meyerson Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsHigh Hole Mobility	1994	162
High electron mobility in modulation-doped Si/SiGe K. Ismail, B.S. Meyerson, P. J. Wang Applied Physics Letters EngineeringPhosphorus DopantChemistrySilicon On InsulatorSemiconductor Device	1991	155
Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures K. Ismail, F. K. LeGoues, K. L. Saenger, Physical Review Letters EngineeringSilicon On InsulatorHigh Electron MobilitiesSemiconductor DeviceSemiconductors	1994	153
Electron resonant tunneling in Si/SiGe double barrier diodes K. Ismail, B.S. Meyerson, P. J. Wang Applied Physics Letters Materials EngineeringElectrical EngineeringBarrier LayersEngineeringTunneling Microscopy	1991	140
High-transconductance n-type Si/SiGe modulation-doped field-effect transistors K. Ismail, B.S. Meyerson, S. A. Rishton, IEEE Electron Device Letters SemiconductorsResultant Device CharacteristicsElectrical EngineeringSemiconductor TechnologyEngineering	1992	122
Room-temperature electron mobility in strained Si/SiGe heterostructures Shelby F. Nelson, K. Ismail, J. O. Chu, Applied Physics Letters Electrical EngineeringEngineeringRelaxed SiliconPhysicsNanoelectronics	1993	113
Negative transconductance and negative differential resistance in a grid-gate modulation-doped field-effect transistor K. Ismail, W. K. Chu, Anthony Yen, Applied Physics Letters Device ModelingSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	1989	102
High-performance Si/SiGe n-type modulation-doped transistors K. Ismail, S. A. Rishton, J. O. Chu, IEEE Electron Device Letters Semiconductor TechnologyRoom TemperatureElectrical EngineeringEngineeringApplied Physics	1993	100

Page 1