Concepedia

K. Ismail

KI

62

Publications

3.1K

Citations

29

H-Index

1988

Active since

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

Massachusetts Institute of Technology

IBM (United States)

Cairo University

University of Illinois Urbana-Champaign

K. Ismail is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and physics.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringPhysicsMicroelectronicsSemiconductorsCondensed Matter PhysicsQuantum MaterialsElectronic EngineeringNanoelectronics

Publications per year

1988–2024

62

Publications

62

Extremely high electron mobility in Si/SiGe modulation-doped heterostructures

K. Ismail, M. Arafa, K. L. Saenger et al. · Applied Physics Letters · 1995 · 223 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

K. Ismail, Shelby F. Nelson, J. O. Chu et al. · Applied Physics Letters · 1993 · 168 citations

Semiconductors, Spacer Layer Thickness, Electrical Engineering +14

High hole mobility in SiGe alloys for device applications

K. Ismail, J. O. Chu, B.S. Meyerson · Applied Physics Letters · 1994 · 162 citations

Materials Engineering, Materials Science, Electrical Engineering +15

High electron mobility in modulation-doped Si/SiGe

K. Ismail, B.S. Meyerson, P. J. Wang · Applied Physics Letters · 1991 · 155 citations

Engineering, Phosphorus Dopant, Chemistry +16

Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

K. Ismail, F. K. LeGoues, K. L. Saenger et al. · Physical Review Letters · 1994 · 153 citations

Engineering, Silicon On Insulator, High Electron Mobilities +16

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