M. Arafa - Concepedia

Author

M. Arafa

University of Illinois Urbana-Champaign ORCID

Also Known As

M. Arafa, Mohamed Arafa

Publications

899

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign IBM Research - Thomas J. Watson Research Center Cairo University IBM (United States)Urbana University

About

M. Arafa is an author at University of Illinois Urbana-Champaign specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	860
2	Applied Physics	13	15	796
3	Chemical Engineering	1	1	10
4	Computer Engineering	1	1	64
5	Computer Science	1	1	64

M. Arafa

Publications

870

Citations

H-Index

Page 1

	Year	Citations
Extremely high electron mobility in Si/SiGe modulation-doped heterostructures K. Ismail, M. Arafa, K. L. Saenger, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringModulation-doped Si/sigeEngineering	1995	223
Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures K. Ismail, F. K. LeGoues, K. L. Saenger, Physical Review Letters EngineeringSilicon On InsulatorHigh Electron MobilitiesSemiconductor DeviceSemiconductors	1994	153
Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP A. Mahajan, M. Arafa, Patrick Fay, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPt Penetration	1998	64
Cascade Lake: Next Generation Intel Xeon Scalable Processor M. Arafa, Bahaa Fahim, Sailesh Kottapalli, IEEE Micro Manycore ProcessorCode-named Cascade LakeMachine LearningEngineeringHardware Acceleration	2019	64
High speed p-type SiGe modulation-doped field-effect transistors M. Arafa, Patrick Fay, K. Ismail, IEEE Electron Device Letters SemiconductorsRoom TemperatureElectrical EngineeringElectronic DevicesEngineering	1996	59
A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET M. Arafa, K. Ismail, J. O. Chu, IEEE Electron Device Letters Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceElectronic Engineering	1996	50
Gated Hall effect measurements in high-mobility <i>n</i>-type Si/SiGe modulation-doped heterostructures K. Ismail, M. Arafa, Frank Stern, Applied Physics Letters SemiconductorsElectron DensityElectrical EngineeringSemiconductor TechnologyEngineering	1995	42
0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor A. Mahajan, M. Arafa, Patrick Fay, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1997	40
InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights W. Wohlmuth, M. Arafa, A. Mahajan, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1996	36
Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors A. Mahajan, G. Cueva, M. Arafa, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh-frequency Device	1997	33

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