A. Mahajan

Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

I. Adesida, A. Mahajan, E. Andideh et al. · Applied Physics Letters · 1993 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP

A. Mahajan, M. Arafa, Patrick Fay et al. · IEEE Transactions on Electron Devices · 1998 · 64 citations

Engineering, Electrical Engineering, Materials Science +14

0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor

A. Mahajan, M. Arafa, Patrick Fay et al. · IEEE Electron Device Letters · 1997 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights

W. Wohlmuth, M. Arafa, A. Mahajan et al. · Applied Physics Letters · 1996 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors

A. Mahajan, G. Cueva, M. Arafa et al. · IEEE Electron Device Letters · 1997 · 33 citations

Engineering, Electrical Engineering, Materials Science +16