Applied Physics Letters · 1991 · 155 citations · 8 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSilicon MaterialsDoped SemiconductorsDoping Effects On Device PerformanceElectron MobilityModulation DopingSilicon DopingSurface StatesTwo-dimensional Electron GasesTwo-dimensional Semiconductor Heterostructures
Ultrahigh-vacuum chemical vapor deposition has been exploited to grow single-heterojunction n-type modulation-doped Si/SiGe structures. Phosphorus dopant is imbedded in the SiGe layer at two distinct positions: one at the surface to prevent depletion by surface states, and the other separated from the Si heterointerface by an intrinsic SiGe spacer, to supply electrons to the two-dimensional electron gas. With a 4-nm-thick spacer layer, peak mobilities of 1800 cm2/V s, 9000 cm2/V s, and 19 000 cm2/V s were measured at room temperature, 77 and 1.4 K, respectively. These are the highest values reported for this material system.
8
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations
Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures
R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations