T. Hackbarth

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Giovanni Isella, Daniel Chrastina, B. Rössner et al. · Solid-State Electronics · 2004 · 149 citations

Engineering, Materials Engineering, Materials Science +16

Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

H. Trinkaus, B. Holländer, St. Rongen et al. · Applied Physics Letters · 2000 · 113 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition

H. von Känel, Matthias Kummer, Giovanni Isella et al. · Applied Physics Letters · 2002 · 102 citations

Engineering, Materials Engineering, Materials Science +17

Strain relaxation of pseudomorphic /(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

B. Holländer, St. Lenk, S. Mantl et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 70 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

M. Luysberg, D. Kirch, H. Trinkaus et al. · Journal of Applied Physics · 2002 · 67 citations

Engineering, Materials Engineering, Materials Science +17