St. Lenk

Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

Qing‐Tai Zhao, U. Breuer, E. Rije et al. · Applied Physics Letters · 2005 · 137 citations

Subsequent Ni Silicidation, Engineering, Sulfur Segregation +20

Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

Joachim Knoch, M. Zhang, Qing‐Tai Zhao et al. · Applied Physics Letters · 2005 · 88 citations

Dopant Segregation Yields, Electrical Engineering, Engineering +11

Strain relaxation of pseudomorphic /(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

B. Holländer, St. Lenk, S. Mantl et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 70 citations

Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

M. Luysberg, D. Kirch, H. Trinkaus et al. · Journal of Applied Physics · 2002 · 67 citations

Engineering, Vacuum Device, Silicon On Insulator +17

Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

Martin Wagner, T. Heeg, J. Schubert et al. · Applied Physics Letters · 2006 · 66 citations

Engineering, Thin Film Process Technology, Silicon On Insulator +16