Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

Abstract

The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide∕silicon interface. S was implanted into silicon prior to silicidation. During subsequent Ni silicidation, the segregation of S at the NiSi∕Si interface leads to the change of the SBH. The SBH of NiSi decreased gradually on n-Si(100) from 0.65eV to 0.07eV and increased correspondingly on p-Si(100).