Low energy plasma enhanced chemical vapor deposition

High-mobility Si and Ge structures

F. Schäffler · Semiconductor Science and Technology · 1997 · 765 citations

Engineering, Materials Science, Physics +17

Lattice Parameter and Density in Germanium-Silicon Alloys¹

John P. Dismukes, Lars‐Gösta Ekström, R. J. Paff · The Journal of Physical Chemistry · 1964 · 754 citations

Natural Sciences, Materials Science, Physics +8

Totally relaxed Ge<i>x</i>Si1−<i>x</i> layers with low threading dislocation densities grown on Si substrates

Eugene A. Fitzgerald, Y. H. Xie, M. L. Green et al. · Applied Physics Letters · 1991 · 688 citations

Engineering, Materials Engineering, Materials Science +16

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 551 citations

Natural Sciences, Materials Engineering, Materials Science +17

Anomalous strain relaxation in SiGe thin films and superlattices

F. K. LeGoues, B.S. Meyerson, J. F. Morar · Physical Review Letters · 1991 · 362 citations

Natural Sciences, Materials Science, Physics +17